Gallium nitride (GaN) is used for efficient and compact motor designs for e-mobility. GaN has high electron mobility and a low temperature coefficient. Therefore, it is beneficial for motor drives to reduce noise, magnetic loss, and costs, while increasing precision. Gallium oxide (Ga2O3), a new material for ultra-wide bandgap semiconductors can be used for high-power devices (> 6.5V), e.g., for electric transportation.
The EIT VALORE Project (N°2118) develops vanadium (V) extraction followed by gallium (Ga) extraction to be fully integrated in the Al-production chain.
https://ressources21.univ-lorraine.fr/content/metal-electric-mobility
